BDX34A Datasheet and Specifications PDF

The BDX34A is a PNP Transistor.

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Part NumberBDX34A Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -4A ·Complement to Type BDX3. mi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC.
Part NumberBDX34A Datasheet
DescriptionPNP Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Bas. 34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C ICEO Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX34/34A : BDX3.
Part NumberBDX34A Datasheet
Description(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS
ManufacturerTRANSYS
Overview SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junc. mA, IB=0 IC=100mA, RBE=100 W IC=100mA, VBE=1.5V VCE=1/2rated VCEO, IB=0 Tc=100ºC VCE=1/2rated VCEO, IB=0 ICBO IE=0,VCB=Rated VCBO, Tc=100ºC IE=0,VCB=Rated VCBO, >45 >60 >80 >100 >120 UNIT V >45 >45 <0.5 >60 >60 <0.5 >80 >80 <0.5 >100 >100 <0.5 >120 >120 <0.5 V V mA <10 <10 <10 <10 <10 .
Part NumberBDX34A Datasheet
DescriptionCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ManufacturerComset Semiconductors
Overview PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configu. tp:// PNP BDX34
* BDX34A
* BDX34B
* BDX34C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B.