The BDX54A is a Silicon PNP Power Transistors.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BDX54A Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX53/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 DESC. . |
| Part Number | BDX54A Datasheet |
|---|---|
| Description | PNP Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BDX54/A/B/C BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively 1 TO. Collector Cut-off Current : BDX54 : BDX54A : BDX54B : BDX54C Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 50. |
| Part Number | BDX54A Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | TRANSYS |
| Overview | Transys Electronics L I M I T E D TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C NPN PLASTIC POWER. = 3 A; IB = 12 mA D.C. current gain IC = 3 A; VCE = 3 V VCBO VCEO IC Ptot Tj VCEsat hFE All dimin sions in mm. K V V A W °C V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open co. |
| Part Number | BDX54A Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage : VCE(sat) = -2.0 V(Max) @ IC = -3.0 A ·Complement to Typ. scsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Component Stockers USA | 735 | 1+ : 99.99 USD | View Offer |
| Worldway Electronics | 25661 | 7+ : 0.0091 USD 10+ : 0.0086 USD 100+ : 0.0082 USD 500+ : 0.0077 USD |
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| Win Source | 20 | - | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| BDX54C | onsemi | Plastic Medium-Power Complementary Silicon Transistors |
| BDX54BG | onsemi | Plastic Medium-Power Complementary Silicon Transistors |
| BDX54B | onsemi | Plastic Medium-Power Complementary Silicon Transistors |
| BDX54C | STMicroelectronics | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX54 | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor |
| BDX54CG | onsemi | Plastic Medium-Power Complementary Silicon Transistors |
| BDX54B | STMicroelectronics | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |