BFG540-X Datasheet
BFG540-X Datasheet (NXP Semiconductors)
NXP Semiconductors
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detecto.
* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT.
BFG540-X Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and re.
reakdown Voltage IC= 1mA ; IB= 0
15
V
ICBO
Collector Cutoff Current
VCB= 8V; IE= 0
0.05 μA
hFE
DC Current Gain
IC=40mA ; VCE= 8V
60
250
fT
Current-Gain
*Bandwidth Product
IC= 40mA ; VCE= 8V; f= 1MHz
9
GHz
Cre
Feedback Capacitance
IE= 0 ; VCB= 8V; f= 1MHz
0.5
pF
Ce
Emitter capac.