BFP196 Datasheet and Specifications PDF

The BFP196 is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Height1.1 mm
Max Operating Temp150 °C
Min Operating Temp-65 °C
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Part NumberBFP196 Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power a. eter Symbol Value Unit Junction - soldering point2) RthJS 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 BFP196 Electrical Characteristics at T.
Part NumberBFP196 Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier . BFP 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE V.

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