| Part Number | BFQ19S Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
NPN Silicon RF Transistor BFQ19S
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■ Features
● For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector.
* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter * Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage. |
BFQ19S Datasheet and Specifications PDF
The BFQ19S is a NPN Silicon RF Transistor.
| Part Number | BFQ19S Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type avai. lues typ. max. Unit V(BR)CEO 15 100 - V µA 100 nA 100 µA 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V S. |
| Part Number | BFQ19S Datasheet |
|---|---|
| Description | Low Noise Silicon Bipolar RF Transistor |
| Manufacturer | Infineon |
| Overview | Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free. int to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA W °C Unit K/W 1 2014-04-03 BFQ19S Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collecto. |