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BFT92 Datasheet

The BFT92 is a PNP Silicon RF Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBFT92
ManufacturerInfineon
Overview BFT92 PNP Silicon RF Transistor  For broadband amplifiers up to 2 GHz 3 at collector currents up to 20 mA  Complementary type: BFR 92P (NPN) 2 1 VPS05161 ESD: Electrostatic discharge sensitive d. . Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 15 50 IEBO 10 ICBO 100 V(BR)CEO 15 typ. max. Unit V nA µA.
Part NumberBFT92
DescriptionPNP 5GHz wideband transistor
ManufacturerNXP Semiconductors
Overview PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transis. low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A. 1.2 Features and benefits  High power gain  Low intermodulation distortion 1.3 Appl.
Part NumberBFT92
DescriptionPNP Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P (NPN) ESD: Electrostatic discharge sensitive device, observe hand. typ. max. Unit V(BR)CEO 15 50 - V nA 100 µA 10 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFT 92 Electrical Characteristics at .

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