BFT92W
FEATURES
- High power gain
- Gold metallization ensures excellent reliability
- SOT323 (S-mini) package.
APPLICATION It is intended as a general purpose transistor for wideband applications up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The handbook, 2 columns
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
DESCRIPTION
1 base
2 emitter
3 collector
1 Top view
MBC870
Marking code: W1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO IC Ptot h FE Cre f T
F collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency up to Ts = 93 C; note 1 IC =
- 15 m A; VCE =
- 10 V IC = 0; VCB =
- 10 V; f = 1 MHz IC =
- 15 m A; VCE =
- 10 V; f = 500 MHz maximum unilateral power gain IC =
- 15 m A; VCE =
- 10 V; f = 500 MHz; Tamb = 25 C noise figure
IC =
- 5 m A; VCE =
- 10 V; f...
