BU1508AX Datasheet and Specifications PDF

The BU1508AX is a Silicon Diffused Power Transistor.

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Max Operating Temp150 °C

BU1508AX Datasheet

BU1508AX Datasheet (NXP Semiconductors)

NXP Semiconductors

BU1508AX Datasheet Preview

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receiver.

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Co.

BU1508AX Datasheet (SavantIC)

SavantIC

BU1508AX Datasheet Preview

·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outl.

ustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IE=1mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5A; IB=1.1A IC=4.5A; IB=1.7A VCE=rated;VBE=0 Tj=125.

BU1508AX Datasheet (Inchange Semiconductor)

Inchange Semiconductor

BU1508AX Datasheet Preview

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use .

RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A VBE(sat) Base-Emitter Saturation Voltag.

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