BU208 Datasheet and Specifications PDF

The BU208 is a HIGH VOLTAGE NPN SILICON POWER TRANSISTOR.

Key Specifications

Mount TypeBushing
Part NumberBU208 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BU208, BU208A types are high voltage NPN silicon power transistors, manufactured by the multiepitaxial mesa process, designed for fast switching horizontal deflection circui. .
Part NumberBU208 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color d. IONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEB.
Part NumberBU208 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerToshiba
Overview : BU208 3A SILICON IMPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CES =1500V . Low Saturation Volt. . High Voltage : V CES =1500V . Low Saturation Voltage : Vc E ( sa t)=5V (Max.)
* Fall Time
** tf=0.7^s (Typ.) . Glass Passivated Base-Collector Junction MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak).

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