BU2515AF Datasheet and Specifications PDF

The BU2515AF is a SILICON POWER TRANSISTOR.

Key Specifications

PackageSOT
Max Operating Temp150 °C

BU2515AF Datasheet

BU2515AF Datasheet (SavantIC)

SavantIC

BU2515AF Datasheet Preview

·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of PC monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum .

ltage IC=100mA ;IB=0 700 V VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A 5.0 V VBEsat Emitter-base saturation voltage IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 1.0 1.0 2.0 1.0 V ICES Collect.

BU2515AF Datasheet (Inchange Semiconductor)

Inchange Semiconductor

BU2515AF Datasheet Preview

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use.

TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; .

BU2515AF Datasheet (NXP Semiconductors)

NXP Semiconductors

BU2515AF Datasheet Preview

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM .

) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Ju.

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