| Part Number | BU2525DF Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour. olute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reve. |
BU2525DF Datasheet and Specifications PDF
The BU2525DF is a Silicon Diffused Power Transistor.
| Part Number | BU2525DF Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Coll. ctor-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=8A ;IB=1.6 A IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125 VEB=6V. |
| Part Number | BU2525DF Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection . herwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutof. |