| Part Number | BU506 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV rec. CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current. |
BU506 Datasheet and Specifications PDF
The BU506 is a NPN Transistor.
| Part Number | BU506 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High voltage ·High-speed switching APPLICATIONS ·Horizontal deflection circuits of colour TV receivers. ·Line-operated switch-mode applications. PINNING PIN . lector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current CONDITIONS IC=100mA; IB=0 IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0.1A ; VCE=5V VCE=rated; VBE=0 TC=125 VEB=6V; IC=0 6 13 MIN 700 1.0 1.3 30 0.5 1.0 10 mA mA TYP. MAX UNIT V. |
| Part Number | BU506 Datasheet |
|---|---|
| Description | Silicon diffused power transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.
BU506; BU506D
2 2
APPLICATIONS • Horizontal deflection circuits of col.
DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.3 inductive load; see Fig.9 VBE = 0 open base IC = 3 A; IB = 1.33 A; see Fig.6 IF = 3 A; see Fig.10 CONDITIONS * * * 1.5 * * * * 0.7 TYP. MAX. 1500 700 1 * 3 5 8 100 * V V V V A A A W µs UNI. |