| Part Number | BU508AF Datasheet |
|---|---|
| Manufacturer | Continental Device India |
| Overview | Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operati. =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(s. |
BU508AF Datasheet and Specifications PDF
The BU508AF is a NPN POWER TRANSISTORS.
| Part Number | BU508AF Datasheet |
|---|---|
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BU508AF BU508AF TV Horizontal Output Applications 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbo. V Min. 700 5 1 10 Typ. Max. Units V V mA mA * Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 BU508AF Typical Characteristics 100 10000 VBE(sat)[mV], SATURATION VOLTAGE VCE = 5V IC = 2 IB hFE, DC CURRENT GAIN 10 1000 1 . |
| Part Number | BU508AF Datasheet |
|---|---|
| Description | High voltage NPN Power transistor |
| Manufacturer | STMicroelectronics |
| Overview |
The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.
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Part.
* * * * * * * State-of-the-art technology: * Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness Fully insulated power package U.L. compliant In compliance with . |
| Part Number | BU508AF Datasheet |
|---|---|
| Description | NPN POWER TRANSISTORS |
| Manufacturer | TRANSYS Electronics |
| Overview | Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operati. 08DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time MIN 700 5.0 TYP . |