| Part Number | BU508AX Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL. Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15. |
BU508AX Datasheet and Specifications PDF
The BU508AX is a Silicon Diffused Power Transistor.
| Part Number | BU508AX Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outl. IC=100mA ;IB=0,L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6.0V; IC=0 1.1 1.0 2.0 10 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE D. |
| Part Number | BU508AX Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. 25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Curren. |