| Part Number | BU508DFI Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 2 3 2 TO-. Value 1500 700 10 8 15 T O - 218 125 150 ISOW ATT 218 50 -65 to 150 150 150 175 Unit V V V A A W o o -65 to 175 -65 to 150 C C 1/8 BU208D / BU508D / BU508DFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO-218 1 ISO WATT218 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase. |
BU508DFI Datasheet and Specifications PDF
The BU508DFI is a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS.
| Part Number | BU508DFI Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use . N TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; IB= 2A VCE= 1500V; VBE= 0 . |
| Part Number | BU508DFI Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PML package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 sim. MIN BU508DFI SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=1500V, VBE=0 Tj=125 VEB=5.0V; IC=0 1. |