| Part Number | BUK9675-100A Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It i. very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9575-100A BUK9675-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-. |
BUK9675-100A Datasheet and Specifications PDF
The BUK9675-100A is a TrenchMOS transistor Logic level FET.
| Part Number | BUK9675-100A Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Nexperia |
| Overview |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u.
and benefits
* AEC Q101 compliant * Low conduction losses due to low on-state resistance 3. Applications * Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj. |