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BUP52 Datasheet

The BUP52 is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBUP52
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for . VCEO(BR) Collector-Emitter Voltage Breakdown IC=10mA; IB=0 IC=20A; IB=2A MIN TYP MAX UNIT 200 V 0.5 VCE(sat) Collector-Emitter Saturation Voltage IC=40A; IB=4A 0.6 V IC=70A; IB=14A 0.9 IC=20A; IB=2A 1.1 VBE(sat) Base-Emitter Saturation Voltage IC=40A; IB=5A 1.2 V IC=70A; IB=15A 1.
Part NumberBUP52
DescriptionSILICON MULTI-EPITAXIAL NPN TRANSISTOR
ManufacturerTT Electronics
Overview SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Av. lab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Ema.