BUV61 Datasheet and Specifications PDF

The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 1 2 TO-.

L DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V .

·High Current Capability ·Fully characterized at 125℃ ·Fast switching speed ·Motor control ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intented fo.

ilicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12.

BUV61 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. .

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: Generated 1-Aug-02 .