Datasheet Details
| Part number | BUV61 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.14 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUV61-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BUV61.
| Part number | BUV61 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.14 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUV61-InchangeSemiconductor.pdf |
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·High Current Capability ·Fully characterized at 125℃ ·Fast switching speed ·Motor control ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV VCEO Collector-Emitter Voltage (VBE= -1.5V) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 200 V 7 V 50 A 75 A 8 A 15 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUV61 | HIGH POWER NPN SILICON TRANSISTOR | STMicroelectronics |
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BUV61 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
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| BUV24 | Silicon NPN Power Transistor |
| BUV26AF | Silicon NPN Power Transistors |
| BUV26F | Silicon NPN Power Transistors |
| BUV28AF | Silicon NPN Power Transistor |