Datasheet Details
| Part number | BUV66 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.76 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUV66-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BUV66.
| Part number | BUV66 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.76 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUV66-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch mode power supply, UPS, DC and AC motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage VBE= -1.5V 850 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IB Base Current-Continuous 5 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7.5 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV66 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
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