BUV60 Overview
Key Features
- High DC current gain
- hFE min = 20 at IC = 25 A = 10 at IC = 50 A Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A Very fast switching times: TF = 0.25 µs at IC = 50 A
| Part | BUV60 |
|---|---|
| Description | SWITCHMODE Series NPN Silicon Power Transistor |
| Category | Transistor |
| Manufacturer | onsemi |
| Size | 62.85 KB |
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BUV60 | Seme LAB | Bipolar NPN Device |
| BUV61 | STMicroelectronics | HIGH POWER NPN SILICON TRANSISTOR |
| BUV62 | Seme LAB | Bipolar NPN Device |
| BUV61 | Inchange Semiconductor | Silicon NPN Power Transistor |
| BUV66 | Inchange Semiconductor | Silicon NPN Power Transistor |