| Part Number | BUZ101 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
50
V
VGS
Gate-Source Voltage-Continuou.
*Drain Current : ID= 29A@ TC=25℃ *Drain Source Voltage : VDSS= 50V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power sw. |
BUZ101 Datasheet
The BUZ101 is a N-Channel MOSFET Transistor.
| Part Number | BUZ101 |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 101 VDS 5. 07/96 BUZ 101 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = -40 °C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS. |