| Part Number | BUZ45A |
|---|---|
| Manufacturer | Intersil |
| Overview |
BUZ45A
Semiconductor
Data Sheet
October 1998
File Number 2258.1
8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET
Features
• 8.3A, 500V
[ /Title This is an N-Channel enhancement mode silicon gate po.
* 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as * SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for . |
BUZ45A Datasheet
The BUZ45A is a N-Channel Power MOSFET.
| Part Number | BUZ45A |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview | BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ45A Voss 500 V RoS(on) 0.8 n 10 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRI. 500 V 500 V ±20 V 8.3 A 33 A 125 W -55 to 150 °C 150 °C C 55/150/56 1/4 211 BUZ45A THERMAL DATA Rthi - case Thermal resistance junction-case max Rthj _amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters . |
| Part Number | BUZ45A |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust de.
*Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) *SOA is Power Dissipation Limited *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION Designed for applications such as switching regulators, switching converters, motor driver. |