The C3M0280090D is a Silicon Carbide Power MOSFET.
| Package | TO-247-3 |
|---|---|
| Pins | 3 |
| Height | 25.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
Wolfspeed
C3M0280090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M Silicon Carbide (SiC) MOSFET technology • High blocking voltage with low On-resistance • Hig.
* C3M Silicon Carbide (SiC) MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
Part Number C3M0280090D
Package TO 247-3
Marking C3M0280090
Wolfspeed, I.
Cree
C3M0280090D Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package • C3M SiC MOSFET technology • High blocking voltage with low On-resistance •.
Package
* C3M SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased pow.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 34 | 34+ : 2.683 USD | View Offer |
| Richardson RFPD | -3 | - | View Offer |
| Microchip USA | 2624 | 50+ : 25.7428 USD 100+ : 25.5576 USD 1000+ : 25.3724 USD 10000+ : 25.1872 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| C3M0280090J | Cree | Silicon Carbide Power MOSFET |
| C3M0280090J | Wolfspeed | Silicon Carbide Power MOSFET |