C4D10120H Datasheet
C4D10120H Datasheet (Cree)
Cree
C4D10120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching •.
* 1.2kV Schottky Rectifier
* Zero Reverse Recovery Current
* High-Frequency Operation
* Temperature-Independent Switching
* Extremely Fast Switching
*
*
Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance
Benefits
* Replace Bipolar with Unipolar Rectifiers
*.
C4D10120H Datasheet (Wolfspeed)
Wolfspeed
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
* Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
* Zero Reverse Recovery Current / Forward
Recovery Voltage
* Temperature-Independent Switching Behavior
Typical Applications
* Industrial Switched Mode Power Supplies
* Uninterruptible & AUX Power Supplies
* Boost for PFC & DC-DC.