| Part Number | CEB6086 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuou.
*Drain Current : ID= 70A@ TC=25℃ *Drain Source Voltage : VDSS= 60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power sw. |
CEB6086 Datasheet and Specifications PDF
The CEB6086 is a N-Channel MOSFET Transistor.
| Part Number | CEB6086 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | CET |
| Overview | CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handin. 60V, 70A, RDS(ON) = 9.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Parameter Drai. |