DAN222 Datasheet and Specifications PDF

The DAN222 is a Dual Switching Diode.

Key Specifications

PackageSOT-416-3
Pins3
Height800 µm
Length1.65 mm
Width900 µm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberDAN222 Datasheet
ManufacturerYangjie Electronic
Overview DAN222 Dual Switching Diode RoHS COMPLIANT Features  Moisture sensitivity level 1  Reverse voltage:80V  Average forward current:100mA Application  High frequency rectifier  Signal switching Me.
* Moisture sensitivity level 1
* Reverse voltage:80V
* Average forward current:100mA Application
* High frequency rectifier
* Signal switching Mechanical data
* Package:SOT-523
* Terminals:Tin plated leads, solderable per J-STD-002 and JESD22-B102
* Maximum Ratings (Ta=25℃ Unless otherwise specifi.
Part NumberDAN222 Datasheet
DescriptionUltra high speed switching
ManufacturerDiodes Incorporated
Overview Diodes DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 zApplication Ultra high spe. 1) Four types of packaging are available. 2) High speed. (trr=1.5ns Typ.) 3) Suitable for high packing density layout. 4) High reliability. 0.22±0.05 (2) 0.40.4 (1) 0.2±0.1 0.8±0.1 0.2±0.1 1.2±0.1 0.8±0.1 0.5±0.05 0∼0.1 0.13±0.05 +0.1 0.2
* 0.05 1.6+
*0.2 1.0+
*0.1 0.5 0.5 +0.1 0.2
*0.05 0.8.
Part NumberDAN222 Datasheet
DescriptionSWITCHING DIODE
ManufacturerJCET
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode DAN222 SWITCHING DIODE FEATURES: z Four types of packaging are available z High speed z Suitable for high packing . z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability MARKING: N SOT-523 1 3 2 NN Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking V.
Part NumberDAN222 Datasheet
DescriptionCOMMON CATHODE DUAL SWITCHING DIODE
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DAN222/D Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultr. (TA = 25°C) Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. t = 1 µS 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 µA VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, .

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