FDC3612 Datasheet PDF

The FDC3612 is a N-Channel MOSFET.

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Part NumberFDC3612 Datasheet
Manufactureronsemi
Overview This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.
* 2.6 A, 100 V RDS(ON) = 125 mW @ VGS = 10 V RDS(ON) = 135 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate Charge (14 nC Typical)
* High Power and Current Handling Capability
* Fast Switching Speed
* This is a Pb
*Free Device Applications
* DC/DC Converter AB.
Part NumberFDC3612 Datasheet
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET FDC3612 (KDC3612) ■ Features ● VDS (V) = 100V ● ID = 2.6 A (VGS = 10V) ● RDS(ON) < 125mΩ (VGS = 10V) ● RDS(ON) < 135mΩ (VGS = 6V) ● Fast switching speed 1 6 2 5 3 4 .
* VDS (V) = 100V
* ID = 2.6 A (VGS = 10V)
* RDS(ON) < 125mΩ (VGS = 10V)
* RDS(ON) < 135mΩ (VGS = 6V)
* Fast switching speed 1 6 2 5 3 4 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 MOSFET Unit:.
Part NumberFDC3612 Datasheet
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.
* 2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V Applications
* DC/DC converter
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (14nC typ)
* High power and current handling capability
* Fast switching speed D D S 1 2 G 6 5 4 SuperSOT .