| Part Number | FDD86250 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
FDD86250
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations .
*With To-252(DPAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
FDD86250 Datasheet and Specifications PDF
The FDD86250 is a N-Channel MOSFET.
| Part Number | FDD86250 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Shielded Gate MOSFET Technology Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A 100% UIL tested RoHS Compliant
This N-Channel MOSFET is produced us.
General Description
* Shielded Gate MOSFET Technology * Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A * Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A * 100% UIL tested * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates S. |