FDG313N Datasheet and Specifications PDF

The FDG313N is a N-Channel Digital FET.

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Part NumberFDG313N Datasheet
Manufactureronsemi
Overview This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize.
* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
* Low gate charge (1.64 nC typical)
* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
* Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
* Compact industry st.
Part NumberFDG313N Datasheet
DescriptionN-Channel Digital FET
ManufacturerFairchild Semiconductor
Overview This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize.
* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
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* Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry .