FDG313N Description
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
FDG313N Key Features
- 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V
- Low gate charge (1.64 nC typical)
- Very low level gate drive requirements allowing direct
- Gate-Source Zener for ESD ruggedness
- pact industry standard SC70-6 surface mount