FDL100N50F Datasheet PDF

The FDL100N50F is a N-Channel MOSFET.

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Part NumberFDL100N50F Datasheet
Manufactureronsemi
Overview UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and .
* RDS(on) = 43 mW (Typ.) @ VGS = 10 V, ID = 50 A
* Low Gate Charge (Typ. 238 nC)
* Low Crss (Typ. 64 pF)
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoHS Compliant Applications
* Uninterruptible Power Supply
* AC
*DC Power Supply DATA SHEET www.onsemi.com G D S TO
*264
*3LD CASE 340CA D G.
Part NumberFDL100N50F Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an.
*With TO-247 packaging
*With low gate drive requirements
*Easy to drive
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.
Part NumberFDL100N50F Datasheet
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A
* Low gate charge ( Typ. 238nC)
* Low Crss ( Typ. 64pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS Compliant UniFETTM May 2009 Description These N-Channel enhancement mode power field effect transistors are produced .