| Part Number | FDMC3612 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Fea.
* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A * Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A * Low Profile * 1 mm Max in Power 33 * 100% UIL Tested * These Devices are Pb *Free and are RoHS Compliant Applications * DC * DC Conversion * PSE Switch DATA SHEET 8765 SSSG 1234 DDDD. |
FDMC3612 Datasheet and Specifications PDF
The FDMC3612 is a N-Channel MOSFET.
| Part Number | FDMC3612 Datasheet |
|---|---|
| Description | N-Channel Power Trench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is prod.
General Description
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A * Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A * Low Profile - 1 mm max in Power 33 * 100% UIL Tested * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has be. |
| Part Number | FDMC3612 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
N-Channel MOSFET FDMC3612 (KDMC3612)
MOSFET
■ Features
● VDS (V) = 100V ● ID = 12A ● RDS(ON) ＜ 110mΩ (VGS = 10V) ● RDS(ON) ＜ 122mΩ (VGS = 6V) ● Low Profile - 1 mm max in Power 33
D5 D6 D7.
* VDS (V) = 100V * ID = 12A * RDS(ON) ＜ 110mΩ (VGS = 10V) * RDS(ON) ＜ 122mΩ (VGS = 6V) * Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S * Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Pac. |