Datasheet Details
| Part number | FDMC3612 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 289.60 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet | FDMC3612-FairchildSemiconductor.pdf |
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Overview: FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ February.
| Part number | FDMC3612 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 289.60 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet | FDMC3612-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications DC - DC Conversion PSE Switch Top 8765 Bottom DDD D 1 234 GS S S MLP 3.3x3.3 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dis
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