FDMC3612 Description
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC3612 Key Features
- Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant