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FDMC3612 - N-Channel Power Trench MOSFET

General Description

Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench®

Key Features

  • General.

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FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ February 2012 Features General Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ DC - DC Conversion „ PSE Switch Top 8765 Bottom DDD D 1 234 GS S S MLP 3.3x3.