FDMC3612
Overview
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A
- Low Profile - 1 mm Max in Power 33
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS Compliant
