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FDMC3612 - N-Channel MOSFET

Datasheet Summary

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A.
  • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDMC3612

Datasheet Details

Part number FDMC3612
Manufacturer ON Semiconductor
File Size 564.78 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC3612 Datasheet
Additional preview pages of the FDMC3612 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 12 A, 110 mW FDMC3612, FDMC3612-L701 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion • PSE Switch DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.
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