FDMC3612 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A.
Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A.
Low Profile.
1 mm Max in Power 33.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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FDMC3612 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC3612
Manufacturer	onsemi
File Size	564.78 KB
Description	N-Channel MOSFET
Datasheet	FDMC3612 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 12 A, 110 mW FDMC3612, FDMC3612-L701 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion • PSE Switch DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.