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FDMC3612 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 12A.
  • RDS(ON) ＜ 110mΩ (VGS = 10V).
  • RDS(ON) ＜ 122mΩ (VGS = 6V).
  • Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Package limited) Continuous Drain Current -Continuous Tc=25℃ (Silicon limited) Ta=25℃ (Note.1) Continuous Drain Current -Pulsed Single Pulse Avalanche Energy (Note.2) Powe.

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SMD Type N-Channel MOSFET FDMC3612 (KDMC3612) MOSFET ■ Features ● VDS (V) = 100V ● ID = 12A ● RDS(ON) ＜ 110mΩ (VGS = 10V) ● RDS(ON) ＜ 122mΩ (VGS = 6V) ● Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Package limited) Continuous Drain Current -Continuous Tc=25℃ (Silicon limited) Ta=25℃ (Note.1) Continuous Drain Current -Pulsed Single Pulse Avalanche Energy (Note.2) Power Dissipation Tc=25℃ Ta=25℃ (Note.1) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID EAS PD RthJA RthJC TJ Tstg Note.