Kexin Electronics FDMC3612
N-Channel MOSFET
FEATURES
● VDS (V) = 100V● ID = 12A
● RDS(ON) < 110mΩ (VGS = 10V)
● RDS(ON) < 122mΩ (VGS = 6V)
● Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Package limited) Continuous Drain Current -Continuous Tc=25℃ (Silicon limited) Ta=25℃ (Note.1) Continuous Drain Current -Pulsed Single Pulse Avalanche Energy (Note.2) Power Dissipation Tc=25℃ Ta=25℃ (Note.1) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID EAS PD RthJA RthJC TJ Tstg Note.1: 53 °C/W when mounted on a 1 in2 pad of 2 oz copper Note.2: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V. Rating 100 ±20 16 12 3.3 15 32 35 2.3 53 3.5 150 -55 to 150 U