| Part Number | FDMS86200DC |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been co.
* Shielded Gate MOSFET Technology * DUAL COOL® Top Side Cooling DFN8 Package * Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A * Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A * High Performance Technology for Extremely Low rDS(on) * 100% UIL Tested * RoHS Compliant Applications * Primary MOSFET in DC *. |