The FLM5964-12F is a Internally Matched FET.
Eudyna Devices
The FLM5964-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program ass.
C-Band Internally Matched FET
* High Output Power: P1dB = 41.5dBm (Typ.)
* High Gain: G1dB = 10.0dB (Typ.)
* High PAE: ηadd = 37% (Typ.)
* Low IM3 = -46dBc@Po = 30.5dBm
* Broad Band: 5.9 ~ 6.4GHz
* Impedance Matched Zin/Zout = 50Ω
* Hermetically Sealed Package
DESCRIPTION
The FLM5964-12F is a p.
Eudyna Devices
The FLM5964-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program ass.
C-Band Internally Matched FET
* High Output Power: P1dB = 41.5dBm (Typ.)
* High Gain: G1dB = 10.0dB (Typ.)
* High PAE: ηadd = 37% (Typ.)
* Low IM3 = -46dBc@Po = 30.5dBm
* Broad Band: 5.9 ~ 6.4GHz
* Impedance Matched Zin/Zout = 50Ω
* Hermetically Sealed Package
DESCRIPTION
The FLM5964-12F is a p.
Fujitsu Semiconductor Limited
The FLM5964-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsu’s stringent Quality Assurance Program as.
C-Band Internally Matched FET
* High Output Power: P1dB = 41.5dBm (Typ.)
* High Gain: G1dB = 10.0dB (Typ.)
* High PAE: hadd = 37% (Typ.)
* Low IM3 = -46dBc@Po = 30.5dBm
* Broad Band: 5.9 ~ 6.4GHz
* Impedance Matched Zin/Zout = 50W
* Hermetically Sealed Package
DESCRIPTION
The FLM5964-12F is a p.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Component Distributors Inc. | 0 | 1+ : 131 USD | View Offer |
| Run Hong Electronics | 8258 | 1+ : 46.1984 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| FLM5964-12F-001 | SUMITOMO | C-Band Internally Matched FET |
| FLM5964-12DA | Fujitsu Semiconductor Limited | Internally Matched Power GaAs FETs |