| Part Number | FQD12N20L Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A * Low Gate Charge (Typ. 16 nC) * Low Crss (Typ. 17 pF) * 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Dr. |
FQD12N20L Datasheet and Specifications PDF
The FQD12N20L is a N-Channel MOSFET.
| Part Number | FQD12N20L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This N−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r.
* 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A * Low Gate Charge (Typ. 16 nC) * Low Crss (Typ. 17 pF) * 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Rating Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain *Source Voltage Dra. |