| Part Number | FQP13N50C Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar stripe,
DMOS technology. This
advanced technology has been especially tai.
* 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A * Low Gate Charge (Typ. 43 nC) * Low Crss (Typ. 20 pF) * 100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current . |
FQP13N50C Datasheet and Specifications PDF
The FQP13N50C is a N-Channel MOSFET.
| Part Number | FQP13N50C Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A * Low Gate Charge (Typ. 43 nC) * Low Crss (Typ. 20 pF) * 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Curre. |