| Part Number | H5N2005DL Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric .
* Low on-resistance * Low drive current * High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain. |
H5N2005DL Datasheet and Specifications PDF
The H5N2005DL is a Silicon N Channel MOS FET High Speed Power Switching.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Through Hole |
| Pins | 4 |
| Height | 2.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | H5N2005DL Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Renesas |
| Overview |
H5N2005DL, H5N2005DS
200V - 6A - MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0796EJ0400 (Previous: REJ03G1104-0300)
Rev.4.00 Jun 07, 2012
Features
Low on-resistance RDS(on) = 0.5.
* Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) * Low drive power * High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Sou. |