H5N2005DL Datasheet and Specifications PDF

The H5N2005DL is a Silicon N Channel MOS FET High Speed Power Switching.

Key Specifications

PackageDPAK
Mount TypeThrough Hole
Pins4
Height2.5 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberH5N2005DL Datasheet
ManufacturerHitachi Semiconductor
Overview To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric .
* Low on-resistance
* Low drive current
* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain.
Part NumberH5N2005DL Datasheet
DescriptionMOSFET
ManufacturerRenesas
Overview H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07, 2012 Features  Low on-resistance RDS(on) = 0.5.
* Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
* Low drive power
* High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Sou.

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