HGT1S3N60A4DS Datasheet and Specifications PDF

The HGT1S3N60A4DS is a 600V SMPS Series N-Channel IGBT.

Key Specifications

PackageTO-263-3
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberHGT1S3N60A4DS Datasheet
ManufacturerIntersil
Overview HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltag. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used .
Part NumberHGT1S3N60A4DS Datasheet
Description600V SMPS Series N-Channel IGBT
ManufacturerFairchild Semiconductor
Overview HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devi. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used .

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Similar Datasheets

Part Number Manufacturer Description
HGT1S3N60A4S Intersil 600V SMPS Series N-Channel IGBT