HGT1S3N60A4DS
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49329.
Features
- >100k Hz Operation At 390V, 3A
- 200k Hz Operation At 390V, 2.5A
- 600V Switching SOA Capability
- Typical Fall Time
- -
- . . 70ns at TJ = 125o C
- Low Conduction Loss
- Temperature pensating SABER™ Model .Fairchildsemi.
Packaging
JEDEC TO-263AB
COLLECTOR (FLANGE)
Ordering Information
PART NUMBER HGT1S3N60A4DS HGTP3N60A4D PACKAGE TO-263AB...
