The IPD220N06L3 is a Power-Transistor.
| Max Operating Temp | 175 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | IPD220N06L3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
Type
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channe.
* Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * N-channel, logic level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications Type IPD220N0. |
| Part Number | IPD220N06L3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤22mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volta. |
| Seller | Inventory | Price Breaks | Buy |
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| Newark | 176 | 1+ : 1.25 USD 10+ : 0.783 USD 25+ : 0.694 USD 50+ : 0.605 USD |
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| Rochester Electronics | 1786 | 100+ : 0.3558 USD 500+ : 0.3202 USD 1000+ : 0.2953 USD 10000+ : 0.2633 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD220N06L3G | Infineon | Power-Transistor |