The IPP041N12N3 is a Power Transistor.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPP041N12N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-26.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant, halogen free * Qualified according to JEDEC1) for target application * I. |
| Part Number | IPP041N12N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPP041N12N3，IIPP041N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lo.
*Static drain-source on-resistance: RDS(on) ≤4.1mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RATI. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPP041N12N3G | Infineon | Power-Transistor |