IPW60R099CP Datasheet and Specifications PDF

9?E-'@'004? 4VVS=>AB= # : A 0<& <,9 =4=>: < 7LHZ[XLY V)DL: HI;>I/ HG M . X V" MIG: B : 9K9IG6I: 9 V% ><= E: 6@8JGG: CI86E67>A>IN # <: /?.>% ?8 8 ,

( =    - ==  3 - =L   3 $ 6I: HDJG8: KDAI6<: - @L deReZT  .   % O - DL: G9>HH>E6I>DC ) e`e , <   Y , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: , [ , deX * DJCI>C< IDGFJ: *  6C9 *   H8G: LH DHS[L ,* *2 2, 1)) *'+ ** .) v+) v,) +..      /) CUPZ 9 ^C 9 O(.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099CP IIPW60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L.

*Static drain-source on-resistance: RDS(on)≤99mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High Peak Current Capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.