IRF1405Z Datasheet and Specifications PDF

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t.

l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1405Z，IIRF1405Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .

*Static drain-source on-resistance: RDS(on) ≤4.9mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=.