| Part Number | IRF3205S Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switchin. available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Sour. |
IRF3205S Datasheet and Specifications PDF
The IRF3205S is a Power MOSFET.
| Part Number | IRF3205S Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Desi. RAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=62A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=55V; VGS= 0 VSD Di. |