| Part Number | IRF3205Z Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3205Z，IIRF3205Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .
*Static drain-source on-resistance: RDS(on) ≤6.5mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |
IRF3205Z Datasheet and Specifications PDF
The IRF3205Z is a N-Channel MOSFET.
| Part Number | IRF3205Z Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
.
* Advanced Process Technology * Ultra Low On-Resistance * 175°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extreme. |