| Part Number | IRF3205ZS Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
.
* Advanced Process Technology * Ultra Low On-Resistance * 175°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extreme. |
IRF3205ZS Datasheet and Specifications PDF
The IRF3205ZS is a Power MOSFET.
| Part Number | IRF3205ZS Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
IRF3205ZS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variation.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |